DMP2035U-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-20V

Number of Terminations :

3

Power Dissipation :

810mW

Rds On (Max) @ Id, Vgs :

35m Ω @ 4A, 4.5V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Rise Time :

12.4ns

Turn-Off Delay Time :

94.1 ns

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

16.8 ns

Mounting Type :

Surface Mount

Number of Elements :

1

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 10V

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

15.4nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 250μA

Vgs (Max) :

±8V

Fall Time (Typ) :

42.4 ns

Factory Lead Time :

15 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Max Junction Temperature (Tj) :

150°C

Length :

3mm

Weight :

7.994566mg

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

ECCN Code :

EAR99

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

-4.9A

Lead Free :

Lead Free

Power Dissipation-Max :

810mW Ta

Element Configuration :

Single

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1.1mm

Number of Pins :

3

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

10V

Published :

2017

RoHS Status :

ROHS3 Compliant

Resistance :

62mOhm

Operating Mode :

ENHANCEMENT MODE

Width :

1.4mm