DMP2022LSSQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

60.2nC @ 10V

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

23 Weeks

FET Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

35A

Input Capacitance (Ciss) (Max) @ Vds :

2575pF @ 10V

Vgs (Max) :

±12V

Power Dissipation-Max :

1.6W Ta

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

9.3A Ta

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G8

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.013Ohm

Terminal Position :

Dual

Continuous Drain Current (ID) :

9.3A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 10V

Additional Feature :

High Reliability

Operating Temperature :

-55°C~155°C TJ

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

Mounting Type :

Surface Mount

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

Automotive, AEC-Q101

Vgs(th) (Max) @ Id :

1.1V @ 250μA