DMP2018LFK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

20V

Height :

580μm

Number of Terminations :

4

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

12V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Power Dissipation-Max :

1W Ta

Lead Free :

Lead Free

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Length :

2.55mm

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Number of Elements :

1

JESD-609 Code :

e4

Rise Time :

29.8ns

Vgs (Max) :

±12V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Fall Time (Typ) :

100.6 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4748pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Width :

2.35mm

JESD-30 Code :

R-PDSO-N4

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

90A

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.2V @ 200μA

Number of Channels :

1

Package / Case :

6-PowerUDFN

Rds On (Max) @ Id, Vgs :

16m Ω @ 3.6A, 4.5V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Continuous Drain Current (ID) :

9.2A

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Pbfree Code :

yes

Turn On Delay Time :

22.8 ns

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 10V

Turn-Off Delay Time :

240.8 ns