DMP2010UFV-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

17 Weeks

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Drain Current-Max (Abs) (ID) :

50A

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Transistor Element Material :

SILICON

Number of Elements :

1

Package / Case :

8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs :

103nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 3.6A, 4.5V

Transistor Application :

SWITCHING

Number of Terminations :

5

Vgs (Max) :

±10V

Terminal Position :

Dual

Power Dissipation-Max :

2W Ta

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0125Ohm

JESD-30 Code :

S-PDSO-F5

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

3350pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

20V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30