DMP10H4D2S-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

0.27A

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

270mA Ta

Terminal Position :

Dual

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

Factory Lead Time :

17 Weeks

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

100V

Continuous Drain Current (ID) :

270mA

Number of Terminations :

3

Vgs (Max) :

±20V

Additional Feature :

High Reliability

Power Dissipation-Max :

380mW Ta

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

4.2 Ω @ 500mA, 10V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

87pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G3

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Number of Elements :

1

Published :

2012

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e3