DMP10H400SE-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

100V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1239pF @ 25V

Continuous Drain Current (ID) :

6A

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.3Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

250m Ω @ 5A, 10V

Pulsed Drain Current-Max (IDM) :

10A

Package / Case :

TO-261-4, TO-261AA

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2W Ta 13.7W Tc

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta 6A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Factory Lead Time :

17 Weeks

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G4

Drain Current-Max (Abs) (ID) :

2.3A

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

ECCN Code :

EAR99