DMP1022UFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-12V

Element Configuration :

Single

Drain-source On Resistance-Max :

0.026ohm

Gate Charge (Qg) (Max) @ Vgs :

48.3nC @ 4.5V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

S-PDSO-N6

Vgs (Max) :

±8V

Capacitance :

2.712nF

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Package / Case :

6-UDFN Exposed Pad

Gate to Source Voltage (Vgs) :

8V

Drain to Source Voltage (Vdss) :

12V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2712pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

39.8ns

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

14.8m Ω @ 4A, 4.5V

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Power Dissipation-Max :

730mW Ta

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Fall Time (Typ) :

147 ns

Continuous Drain Current (ID) :

9.5A

FET Type :

P-Channel

Turn On Delay Time :

25.1 ns

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Terminations :

6

Vgs(th) (Max) @ Id :

800mV @ 250μA

JESD-609 Code :

e4

Terminal Form :

NO LEAD

Turn-Off Delay Time :

141 ns