DMP1022UFDF-13
- Mfr.Part #
- DMP1022UFDF-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 9.5A 6UDFN
- Stock
- 17,729
- In Stock :
- 17,729
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- JESD-30 Code :
- S-PDSO-N6
- Turn-Off Delay Time :
- 141 ns
- Vgs (Max) :
- ±8V
- Terminal Position :
- Dual
- Drain-source On Resistance-Max :
- 0.026ohm
- JESD-609 Code :
- e4
- Terminal Form :
- NO LEAD
- Factory Lead Time :
- 14 Weeks
- Rds On (Max) @ Id, Vgs :
- 14.8m Ω @ 4A, 4.5V
- Package / Case :
- 6-UDFN Exposed Pad
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Additional Feature :
- High Reliability
- Drain to Source Breakdown Voltage :
- -12V
- Capacitance :
- 2.712nF
- Drain to Source Voltage (Vdss) :
- 12V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Published :
- 2013
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Vgs(th) (Max) @ Id :
- 800mV @ 250μA
- Continuous Drain Current (ID) :
- 9.5A
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 48.3nC @ 4.5V
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1
- Number of Terminations :
- 6
- Power Dissipation-Max :
- 730mW Ta
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Ta
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 8V
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2712pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.2V 4.5V
- Fall Time (Typ) :
- 147 ns
- Turn On Delay Time :
- 25.1 ns
- Rise Time :
- 39.8ns
- Datasheets
- DMP1022UFDF-13

P-Channel Tape & Reel (TR) 14.8m Ω @ 4A, 4.5V ±8V 2712pF @ 10V 48.3nC @ 4.5V 12V 6-UDFN Exposed Pad
DMP1022UFDF-13 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2712pF @ 10V.This device conducts a continuous drain current (ID) of 9.5A, which is the maximum continuous current transistor can conduct.Using VGS=-12V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -12V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 141 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25.1 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 12V.In order to reduce power consumption, this device uses a drive voltage of 1.2V 4.5V volts (1.2V 4.5V).
DMP1022UFDF-13 Features
a continuous drain current (ID) of 9.5A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 141 ns
a 12V drain to source voltage (Vdss)
DMP1022UFDF-13 Applications
There are a lot of Diodes Incorporated
DMP1022UFDF-13 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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