DMP1022UFDE-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power Dissipation-Max :

660mW Ta

Number of Pins :

6

Fall Time (Typ) :

93 ns

JESD-609 Code :

e4

Vgs (Max) :

±8V

Lead Free :

Lead Free

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

Number of Elements :

1

Rise Time :

28ns

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

9.1A

Length :

2.05mm

Gate Charge (Qg) (Max) @ Vgs :

42.6nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Package / Case :

6-UDFN Exposed Pad

ECCN Code :

EAR99

Case Connection :

DRAIN

Number of Terminations :

3

Mount :

Surface Mount

JESD-30 Code :

S-PDSO-N3

Rds On (Max) @ Id, Vgs :

16m Ω @ 8.2A, 4.5V

Turn-Off Delay Time :

117 ns

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

580μm

Input Capacitance (Ciss) (Max) @ Vds :

2953pF @ 4V

Width :

2.05mm

Terminal Position :

Dual

Pin Count :

6

Vgs(th) (Max) @ Id :

800mV @ 250μA

Number of Channels :

2

Current - Continuous Drain (Id) @ 25°C :

9.1A Ta

Turn On Delay Time :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

REACH SVHC :

No SVHC

Element Configuration :

Single

Transistor Application :

SWITCHING

Power Dissipation :

2.03W

Pbfree Code :

yes

Transistor Element Material :

SILICON

Published :

2012

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ