DMP1011UCB9-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Feedback Cap-Max (Crss) :

350 pF

Package / Case :

9-UFBGA, WLBGA

Mounting Type :

Surface Mount

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

7.4A

Drain-source On Resistance-Max :

0.014Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Terminations :

9

Power Dissipation-Max :

890mW Ta

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

S-PBGA-B9

Published :

2015

Continuous Drain Current (ID) :

10A

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 4V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

10m Ω @ 2A, 4.5V

Vgs (Max) :

-6V

JESD-609 Code :

e1

Additional Feature :

High Reliability

Terminal Form :

Ball

Terminal Position :

BOTTOM

Factory Lead Time :

22 Weeks

DS Breakdown Voltage-Min :

8V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

8V

Reference Standard :

AEC-Q101

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.1V @ 250μA