DMN95H8D5HCTI

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

Not Applicable

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

30W Tc

Rds On (Max) @ Id, Vgs :

7 Ω @ 1A, 10V

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Drain to Source Voltage (Vdss) :

950V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

97 mJ

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

DS Breakdown Voltage-Min :

950V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

3A

Terminal Position :

Single

JESD-609 Code :

e3

Drain-source On Resistance-Max :

7Ohm

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Surface Mount :

No

Vgs (Max) :

±30V

Factory Lead Time :

17 Weeks

JESD-30 Code :

R-PSFM-T3