DMN95H2D2HCTI

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

17 Weeks

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

FET Type :

N-Channel

Packaging :

Tube

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Drain to Source Voltage (Vdss) :

950V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

6A

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

24A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Number of Elements :

1

Power Dissipation-Max :

40W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1487pF @ 25V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

360 mJ

Gate Charge (Qg) (Max) @ Vgs :

20.3nC @ 10V

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

950V

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 3A, 10V

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSFM-T3