DMN95H2D2HCTI

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

950V

DS Breakdown Voltage-Min :

950V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

6A

Avalanche Energy Rating (Eas) :

360 mJ

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

40W Tc

Gate Charge (Qg) (Max) @ Vgs :

20.3nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Input Capacitance (Ciss) (Max) @ Vds :

1487pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 3A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Packaging :

Tube

Factory Lead Time :

17 Weeks

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs (Max) :

±30V

FET Type :

N-Channel

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

24A