DMN90H8D5HCTI

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

7Ohm

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Pulsed Drain Current-Max (IDM) :

3A

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

97 mJ

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Rds On (Max) @ Id, Vgs :

7 Ω @ 1A, 10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack, Isolated Tab

JESD-609 Code :

e3

Factory Lead Time :

17 Weeks

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

2.5A

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

DS Breakdown Voltage-Min :

900V

Drain to Source Voltage (Vdss) :

900V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 10V

Power Dissipation-Max :

30W Tc

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Number of Elements :

1

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)