DMN4800LSS-13

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Mfr.Part #
DMN4800LSS-13
Manufacturer
Diodes Incorporated
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 9A 8SOP
Stock
120
In Stock :
120

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
8
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
8.6A
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
9A Ta
Pulsed Drain Current-Max (IDM) :
50A
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Turn On Delay Time :
5.03 ns
Vgs (Max) :
±25V
Turn-Off Delay Time :
26.33 ns
Fall Time (Typ) :
4.5 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
1.46W Ta
Power Dissipation :
1.7W
Terminal Form :
Gull wing
Rds On (Max) @ Id, Vgs :
16m Ω @ 9A, 10V
Drain Current-Max (Abs) (ID) :
9A
Number of Terminations :
8
Gate Charge (Qg) (Max) @ Vgs :
9.47nC @ 5V
Factory Lead Time :
15 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs(th) (Max) @ Id :
1.6V @ 250μA
Weight :
73.992255mg
FET Type :
N-Channel
Number of Channels :
1
Mounting Type :
Surface Mount
Length :
4.95mm
ECCN Code :
EAR99
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Matte Tin (Sn)
Drain to Source Breakdown Voltage :
30V
REACH SVHC :
No SVHC
Input Capacitance (Ciss) (Max) @ Vds :
798pF @ 10V
Peak Reflow Temperature (Cel) :
260
Additional Feature :
High Reliability
Radiation Hardening :
No
Published :
2009
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Width :
3.95mm
Terminal Position :
Dual
Transistor Element Material :
SILICON
Height :
1.5mm
Gate to Source Voltage (Vgs) :
25V
Number of Pins :
8
Rise Time :
4.5ns
JESD-609 Code :
e3
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
SWITCHING
Datasheets
DMN4800LSS-13
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN4800LSS-13 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, DMN4800LSS-13 pinout, DMN4800LSS-13 datasheet PDF, DMN4800LSS-13 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN4800LSS-13 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMN4800LSS-13


N-Channel Tape & Reel (TR) 16m Ω @ 9A, 10V ±25V 798pF @ 10V 9.47nC @ 5V 8-SOIC (0.154, 3.90mm Width)

DMN4800LSS-13 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 798pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 9A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26.33 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5.03 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

DMN4800LSS-13 Features


a continuous drain current (ID) of 8.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 26.33 ns
based on its rated peak drain current 50A.


DMN4800LSS-13 Applications


There are a lot of Diodes Incorporated
DMN4800LSS-13 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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