DMN4015LK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Channels :

1

Drain to Source Voltage (Vdss) :

40V

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Drain to Source Resistance :

20mOhm

Height :

2.39mm

Element Configuration :

Single

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

15mOhm @ 14A, 10V

Turn-Off Delay Time :

37.3 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

2.19W Ta

Rise Time :

18.5ns

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

20.8A

Fall Time (Typ) :

14.9 ns

Min Operating Temperature :

-55°C

Rds On Max :

15 mΩ

Width :

6.22mm

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Weight :

3.949996g

Length :

6.73mm

Mount :

Surface Mount

Turn On Delay Time :

7.8 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

13.5A Ta

Input Capacitance (Ciss) (Max) @ Vds :

2072pF @ 20V

Supplier Device Package :

TO-252-3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Input Capacitance :

2.072nF