DMN4027SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

3.1 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

3.1ns

Turn-Off Delay Time :

15.4 ns

Drain to Source Voltage (Vdss) :

40V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

5.4A

Length :

5mm

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

7.1A

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

12.9nC @ 10V

Number of Terminations :

8

ECCN Code :

EAR99

Weight :

73.992255mg

Width :

4mm

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

27m Ω @ 7A, 10V

Transistor Element Material :

SILICON

Height :

1.5mm

Fall Time (Typ) :

7.5 ns

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

604pF @ 20V

Radiation Hardening :

No

Number of Elements :

2

Published :

2010

Element Configuration :

Dual

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Factory Lead Time :

17 Weeks

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Number of Pins :

8

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Drain to Source Breakdown Voltage :

40V

Base Part Number :

DMN4027SSD

Power Dissipation :

2.1W

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

3V @ 250µA

Max Power Dissipation :

1.8W