DMN3900UFA-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e4

Current - Continuous Drain (Id) @ 25°C :

550mA Ta

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.65A

Continuous Drain Current (ID) :

650mA

Power Dissipation-Max :

390mW Ta

Vgs (Max) :

±8V

Turn On Delay Time :

10.5 ns

Radiation Hardening :

No

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

8V

Rise Time :

7.8ns

Factory Lead Time :

15 Weeks

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Package / Case :

3-XFDFN

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Case Connection :

DRAIN

Mount :

Surface Mount

Turn-Off Delay Time :

80.6 ns

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Element Configuration :

Single

Fall Time (Typ) :

23.4 ns

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

42.2pF @ 25V

Rds On (Max) @ Id, Vgs :

760m Ω @ 200mA, 4.5V

Vgs(th) (Max) @ Id :

950mV @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Digi-Reel®

REACH SVHC :

No SVHC

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Published :

2013

Number of Pins :

3