DMN3900UFA-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

BOTTOM

Drain Current-Max (Abs) (ID) :

0.65A

Vgs(th) (Max) @ Id :

950mV @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Number of Pins :

3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

760m Ω @ 200mA, 4.5V

Drain to Source Breakdown Voltage :

30V

Packaging :

Digi-Reel®

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

390mW Ta

Published :

2013

Package / Case :

3-XFDFN

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

42.2pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

10.5 ns

Fall Time (Typ) :

23.4 ns

Number of Channels :

1

Turn-Off Delay Time :

80.6 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Factory Lead Time :

15 Weeks

Continuous Drain Current (ID) :

650mA

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e4

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

550mA Ta

Vgs (Max) :

±8V

Rise Time :

7.8ns

FET Type :

N-Channel

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate to Source Voltage (Vgs) :

8V

Number of Elements :

1

ECCN Code :

EAR99

Lead Free :

Lead Free