DMN32D2LFB4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Width :

600μm

Drain to Source Breakdown Voltage :

30V

Pin Count :

3

Turn-Off Delay Time :

51 ns

Power Dissipation-Max :

350mW Ta

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

10V

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

ECCN Code :

EAR99

Turn On Delay Time :

11 ns

JESD-609 Code :

e4

Terminal Position :

BOTTOM

Resistance :

1.2Ohm

Number of Channels :

1

FET Type :

N-Channel

Factory Lead Time :

15 Weeks

Contact Plating :

Gold

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 100mA, 4V

REACH SVHC :

No SVHC

Number of Elements :

1

Published :

2017

Number of Pins :

3

Length :

1mm

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4V

Continuous Drain Current (ID) :

300mA

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Height :

350μm

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Vgs (Max) :

±10V

Package / Case :

3-XFDFN

Power Dissipation :

350mW

Input Capacitance (Ciss) (Max) @ Vds :

39pF @ 3V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Mount :

Surface Mount

Number of Terminations :

3

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260