DMN3200U-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Width :

1.3mm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 4.5V

RoHS Status :

ROHS3 Compliant

Height :

1mm

Factory Lead Time :

16 Weeks

Mount :

Surface Mount

FET Type :

N-Channel

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 10V

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

8V

Terminal Form :

Gull wing

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Drain-source On Resistance-Max :

0.09Ohm

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Vgs (Max) :

±8V

REACH SVHC :

No SVHC

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation-Max :

650mW Ta

Length :

2.9mm

Power Dissipation :

650mW

Number of Channels :

1

Weight :

7.994566mg

Transistor Element Material :

SILICON

Pin Count :

3

Published :

2008

Continuous Drain Current (ID) :

2.2A

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes