DMN3112SSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

FET Type :

N-Channel

Length :

4.95mm

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

6A

Power Dissipation :

2.5W

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

2.5W Ta

Weight :

850.995985mg

Peak Reflow Temperature (Cel) :

260

Width :

3.9mm

Additional Feature :

High Reliability

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

6A Ta

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Pulsed Drain Current-Max (IDM) :

24A

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

1.5mm

REACH SVHC :

No SVHC

Number of Pins :

8

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

268pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

57m Ω @ 5.8A, 10V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.057Ohm

Packaging :

Tape and Reel (TR)

Published :

2008

Continuous Drain Current (ID) :

6A

Number of Channels :

1