DMN3112S-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

57m Ω @ 5.8A, 10V

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Element Configuration :

Single

ECCN Code :

EAR99

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Power Dissipation :

1.4W

Pulsed Drain Current-Max (IDM) :

20A

Published :

2008

Power Dissipation-Max :

1.4W Ta

Height :

1mm

Number of Terminations :

3

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain-source On Resistance-Max :

0.057Ohm

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

FET Type :

N-Channel

Weight :

7.994566mg

Width :

1.3mm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

268pF @ 5V

Continuous Drain Current (ID) :

5.8A

Terminal Position :

Dual

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

High Reliability

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Length :

2.9mm

RoHS Status :

ROHS3 Compliant

Number of Channels :

1