DMN3110S-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.8W

Terminal Position :

Dual

Published :

2011

Turn On Delay Time :

2.6 ns

Terminal Finish :

Matte Tin (Sn)

Weight :

7.994566mg

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

305.8pF @ 15V

Width :

1.4mm

Length :

3mm

Drain Current-Max (Abs) (ID) :

2.5A

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

Element Configuration :

Single

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

1

Turn-Off Delay Time :

13.1 ns

Number of Pins :

3

Fall Time (Typ) :

2.5 ns

Rds On (Max) @ Id, Vgs :

73m Ω @ 3.1mA, 10V

Continuous Drain Current (ID) :

3.3A

Number of Channels :

1

Rise Time :

4.6ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Additional Feature :

High Reliability

Pbfree Code :

yes

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Radiation Hardening :

No

Power Dissipation-Max :

740mW Ta

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Gold

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1mm

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Terminations :

3