DMN30H4D0L-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

Fall Time (Typ) :

17.5 ns

Gate Charge (Qg) (Max) @ Vgs :

7.6nC @ 10V

Element Configuration :

Single

Factory Lead Time :

5 Weeks

Base Part Number :

DMN30H4

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

4.7ns

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

187.3pF @ 25V

Number of Channels :

1

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

310mW Ta

Packaging :

Tape and Reel (TR)

Published :

2014

Rds On (Max) @ Id, Vgs :

4 Ω @ 300mA, 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

25.8 ns

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

300V

Weight :

7.994566mg

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

4.9 ns

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

250mA