DMN30H14DLY-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

3.3 ns

Mount :

Surface Mount

Number of Elements :

1

Fall Time (Typ) :

12 ns

Terminal Form :

Flat

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-F3

Transistor Application :

SWITCHING

Number of Pins :

4

Additional Feature :

High Reliability

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

300V

Published :

2014

Weight :

130.492855mg

Turn-Off Delay Time :

22 ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

14 Ω @ 300mA, 10V

Current - Continuous Drain (Id) @ 25°C :

210mA Ta

Power Dissipation-Max :

900mW Ta

Base Part Number :

DMN30H14

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

JESD-609 Code :

e3

Number of Terminations :

3

Continuous Drain Current (ID) :

210mA

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Rise Time :

8.6ns

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

96pF @ 25V

Drain to Source Voltage (Vdss) :

300V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-243AA