DMN3070SSN-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Published :

2010

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

4.3 ns

Additional Feature :

High Reliability

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

697pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Rise Time :

20.1ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Height :

1.3mm

Weight :

7.994566mg

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

59

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Length :

3.1mm

Turn-Off Delay Time :

4.4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

13.2nC @ 10V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Number of Terminations :

3

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Width :

1.7mm

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

780mW Ta

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Drain-source On Resistance-Max :

0.04Ohm

Number of Channels :

1

Fall Time (Typ) :

4.1 ns

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G3

Terminal Position :

Dual

Continuous Drain Current (ID) :

4.2A