DMN3070SSN-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

780mW Ta

Width :

1.7mm

Continuous Drain Current (ID) :

4.2A

Rise Time :

20.1ns

Number of Terminations :

3

Factory Lead Time :

16 Weeks

Additional Feature :

High Reliability

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.2A, 10V

Turn On Delay Time :

4.3 ns

Weight :

7.994566mg

Operating Mode :

ENHANCEMENT MODE

Published :

2010

Gate to Source Voltage (Vgs) :

20V

Length :

3.1mm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.04Ohm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Element Configuration :

Single

Turn-Off Delay Time :

4.4 ns

Gate Charge (Qg) (Max) @ Vgs :

13.2nC @ 10V

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Fall Time (Typ) :

4.1 ns

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Height :

1.3mm

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

697pF @ 15V

Radiation Hardening :

No

FET Type :

N-Channel

Number of Channels :

1

Packaging :

Cut Tape (CT)

Number of Pins :

59

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G3

Vgs (Max) :

±20V

ECCN Code :

EAR99