DMN3065LW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

JESD-30 Code :

R-PDSO-G3

Power Dissipation-Max :

770mW Ta

Weight :

6.010099mg

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

4A

Rise Time :

1.6ns

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.052Ohm

Gate Charge (Qg) (Max) @ Vgs :

11.7nC @ 10V

Turn-Off Delay Time :

10.3 ns

Number of Channels :

1

Terminal Position :

Dual

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Input Capacitance (Ciss) (Max) @ Vds :

465pF @ 15V

Factory Lead Time :

22 Weeks

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±12V

Published :

2014

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Fall Time (Typ) :

2 ns

Continuous Drain Current (ID) :

4A

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

JESD-609 Code :

e3

Package / Case :

SC-70, SOT-323

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

1.9 ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

52m Ω @ 4A, 10V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Base Part Number :

DMN3065

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Number of Terminations :

3