DMN3052LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Power Dissipation :

2.5W

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 5V

FET Type :

N-Channel

Terminal Form :

Gull wing

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

12V

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

7.1A Ta

Number of Channels :

1

Number of Pins :

8

Continuous Drain Current (ID) :

7.1A

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

JESD-609 Code :

e3

Pbfree Code :

yes

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

30m Ω @ 7.1A, 10V

Drain to Source Breakdown Voltage :

30V

Width :

3.9mm

Vgs (Max) :

±12V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation-Max :

2.5W Ta

Transistor Application :

SWITCHING

Number of Terminations :

8

Height :

1.5mm

Transistor Element Material :

SILICON

Weight :

850.995985mg

Operating Temperature :

-55°C~150°C TJ

Length :

4.95mm

Published :

2012

Peak Reflow Temperature (Cel) :

260

Additional Feature :

High Reliability

Drain-source On Resistance-Max :

0.03Ohm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Pin Count :

8