DMN3052L-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

12V

JESD-609 Code :

e3

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

32m Ω @ 5.8A, 10V

Power Dissipation-Max :

1.4W Ta

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Power Dissipation :

1.4W

Additional Feature :

High Reliability

Published :

2009

Continuous Drain Current (ID) :

5.4A

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Weight :

7.994566mg

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Drive Voltage (Max Rds On,Min Rds On) :

2V 10V

Radiation Hardening :

No

Pin Count :

3

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Number of Elements :

1

Height :

1mm

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

30V

Terminal Position :

Dual

Length :

2.9mm

Number of Pins :

3

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Number of Channels :

1

Number of Terminations :

3

Resistance :

32mOhm

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 5V

Width :

1.3mm

Mounting Type :

Surface Mount

Vgs (Max) :

±12V