DMN3051LDM-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

900mW

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

424pF @ 5V

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Number of Pins :

6

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

4A

Drain-source On Resistance-Max :

0.038Ohm

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

6

Pbfree Code :

yes

Width :

1.6mm

Factory Lead Time :

15 Weeks

Published :

2009

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

38m Ω @ 6A, 10V

Number of Elements :

1

Length :

3mm

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

900mW Ta

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

30V

Pin Count :

6

Height :

1.1mm

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

SOT-23-6

Terminal Position :

Dual

JESD-609 Code :

e3

Transistor Application :

SWITCHING

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount