DMN3051L-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Terminations :

3

Power Dissipation :

1.4W

Mount :

Surface Mount

Height :

1mm

Turn On Delay Time :

3.4 ns

Power Dissipation-Max :

700mW Ta

Number of Pins :

3

Weight :

7.994566mg

Input Capacitance (Ciss) (Max) @ Vds :

424pF @ 5V

Element Configuration :

Single

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Length :

2.9mm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

ECCN Code :

EAR99

Published :

2013

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Number of Elements :

1

Number of Channels :

1

Vgs (Max) :

±20V

Fall Time (Typ) :

2.8 ns

Continuous Drain Current (ID) :

5.8A

Transistor Application :

SWITCHING

Turn-Off Delay Time :

13.9 ns

Factory Lead Time :

15 Weeks

Rds On (Max) @ Id, Vgs :

38m Ω @ 5.8A, 10V

Drain Current-Max (Abs) (ID) :

4.5A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Width :

1.3mm

Terminal Finish :

Matte Tin (Sn)

Rise Time :

6.2ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V