DMN3050S-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1.4W

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.4W Ta

Width :

1.3mm

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

20A

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Number of Channels :

1

Radiation Hardening :

No

JESD-609 Code :

e3

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

5.2A Ta

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Length :

2.9mm

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.2A, 10V

Pbfree Code :

yes

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 15V

Number of Pins :

3

Height :

1mm

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Weight :

7.994566mg

Continuous Drain Current (ID) :

5.2A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Element Configuration :

Single

FET Type :

N-Channel