DMN3042L-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Power Dissipation-Max :

720mW Ta

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

JESD-30 Code :

R-PDSO-G3

Drain-source On Resistance-Max :

0.0265Ohm

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Feedback Cap-Max (Crss) :

80 pF

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 5.8A, 10V

Published :

2015

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

5.8A

Vgs (Max) :

±12V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Transistor Element Material :

SILICON

Factory Lead Time :

23 Weeks