DMN3042L-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Power Dissipation-Max :

720mW Ta

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.4V @ 250μA

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Number of Elements :

1

Continuous Drain Current (ID) :

5.8A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Feedback Cap-Max (Crss) :

80 pF

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.0265Ohm

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 15V

Vgs (Max) :

±12V

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G3

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 5.8A, 10V

Factory Lead Time :

23 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Published :

2015