DMN3033LSN-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Element Configuration :

Single

Power Dissipation-Max :

1.4W Ta

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 5V

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

24A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

15 Weeks

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

30m Ω @ 6A, 10V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Turn On Delay Time :

11 ns

Width :

1.6mm

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

755pF @ 10V

Lead Free :

Lead Free

Fall Time (Typ) :

7 ns

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

FET Type :

N-Channel

Power Dissipation :

1.4W

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Height :

1.1mm

Vgs(th) (Max) @ Id :

2.1V @ 250μA

REACH SVHC :

No SVHC

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Terminal Position :

Dual

Mounting Type :

Surface Mount

Pin Count :

3

Published :

2011

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

6A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

6A Ta

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

6A

Turn-Off Delay Time :

63 ns

Rise Time :

7ns

Resistance :

30mOhm

Weight :

7.994566mg

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

High Reliability

Length :

3mm