DMN3033LDM-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

30 ns

Number of Elements :

1

FET Type :

N-Channel

Lead Free :

Lead Free

Mount :

Surface Mount

Turn-Off Delay Time :

63 ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Terminal Form :

Gull wing

Height :

1.1mm

Published :

2009

Drain-source On Resistance-Max :

0.033Ohm

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

755pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

6.9A Ta

Drain to Source Breakdown Voltage :

30V

Rise Time :

7ns

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

6.9A

Pulsed Drain Current-Max (IDM) :

20A

Power Dissipation-Max :

2W Ta

Pin Count :

6

Turn On Delay Time :

11 ns

Package / Case :

SOT-23-6

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

7 Weeks

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

33m Ω @ 6.9A, 10V

Number of Channels :

1

Width :

1.6mm

Power Dissipation :

2W

Radiation Hardening :

No

Pbfree Code :

yes

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

High Reliability

REACH SVHC :

No SVHC