DMN3032LE-13
- Mfr.Part #
- DMN3032LE-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 5.6A SOT223
- Stock
- 228,521
- In Stock :
- 228,521
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 10 ns
- Rds On Max :
- 29 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 29mOhm @ 3.2A, 10V
- Height :
- 1.65mm
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 1.9 ns
- Package / Case :
- TO-261-4, TO-261AA
- Mount :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- Drain to Source Resistance :
- 35mOhm
- Number of Pins :
- 3
- Input Capacitance :
- 498pF
- Turn On Delay Time :
- 2.3 ns
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Power Dissipation-Max :
- 1.8W Ta
- Supplier Device Package :
- SOT-223
- Continuous Drain Current (ID) :
- 5.6A
- Drain to Source Voltage (Vdss) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 498pF @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.55mm
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Ta
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Base Part Number :
- DMN3032
- Rise Time :
- 3.9ns
- Factory Lead Time :
- 22 Weeks
- Width :
- 3.55mm
- Max Operating Temperature :
- 150°C
- Published :
- 2014
- Datasheets
- DMN3032LE-13

N-Channel Cut Tape (CT) 29mOhm @ 3.2A, 10V ±20V 498pF @ 15V 11.3nC @ 10V 30V TO-261-4, TO-261AA
DMN3032LE-13 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 498pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.6A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.This device has a drain-to-source resistance of 35mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
DMN3032LE-13 Features
a continuous drain current (ID) of 5.6A
the turn-off delay time is 10 ns
single MOSFETs transistor is 35mOhm
a 30V drain to source voltage (Vdss)
DMN3032LE-13 Applications
There are a lot of Diodes Incorporated
DMN3032LE-13 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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