DMN3032LE-13

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Mfr.Part #
DMN3032LE-13
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 30V 5.6A SOT223
Stock
228,521
In Stock :
228,521

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
30V
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
498pF @ 15V
Base Part Number :
DMN3032
Package / Case :
TO-261-4, TO-261AA
Operating Temperature :
-55°C~150°C TJ
Supplier Device Package :
SOT-223
Packaging :
Cut Tape (CT)
Input Capacitance :
498pF
Current - Continuous Drain (Id) @ 25°C :
5.6A Ta
Factory Lead Time :
22 Weeks
Length :
6.55mm
Turn On Delay Time :
2.3 ns
Fall Time (Typ) :
1.9 ns
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
5.6A
Min Operating Temperature :
-55°C
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Height :
1.65mm
Power Dissipation-Max :
1.8W Ta
Width :
3.55mm
FET Type :
N-Channel
Element Configuration :
Single
Rise Time :
3.9ns
Drain to Source Resistance :
35mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
150°C
Rds On Max :
29 mΩ
Rds On (Max) @ Id, Vgs :
29mOhm @ 3.2A, 10V
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Published :
2014
Turn-Off Delay Time :
10 ns
Number of Pins :
3
Datasheets
DMN3032LE-13
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN3032LE-13 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:DMN3032, Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, DMN3032LE-13 pinout, DMN3032LE-13 datasheet PDF, DMN3032LE-13 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN3032LE-13 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMN3032LE-13


N-Channel Cut Tape (CT) 29mOhm @ 3.2A, 10V ±20V 498pF @ 15V 11.3nC @ 10V 30V TO-261-4, TO-261AA

DMN3032LE-13 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 498pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.6A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.This device has a drain-to-source resistance of 35mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

DMN3032LE-13 Features


a continuous drain current (ID) of 5.6A
the turn-off delay time is 10 ns
single MOSFETs transistor is 35mOhm
a 30V drain to source voltage (Vdss)


DMN3032LE-13 Applications


There are a lot of Diodes Incorporated
DMN3032LE-13 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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