DMN3032LE-13

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Mfr.Part #
DMN3032LE-13
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 30V 5.6A SOT223
Stock
228,521
In Stock :
228,521

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
10 ns
Rds On Max :
29 mΩ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rds On (Max) @ Id, Vgs :
29mOhm @ 3.2A, 10V
Height :
1.65mm
Min Operating Temperature :
-55°C
Fall Time (Typ) :
1.9 ns
Package / Case :
TO-261-4, TO-261AA
Mount :
Surface Mount
Packaging :
Cut Tape (CT)
Drain to Source Resistance :
35mOhm
Number of Pins :
3
Input Capacitance :
498pF
Turn On Delay Time :
2.3 ns
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
2V @ 250μA
Power Dissipation-Max :
1.8W Ta
Supplier Device Package :
SOT-223
Continuous Drain Current (ID) :
5.6A
Drain to Source Voltage (Vdss) :
30V
Input Capacitance (Ciss) (Max) @ Vds :
498pF @ 15V
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
6.55mm
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
5.6A Ta
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Base Part Number :
DMN3032
Rise Time :
3.9ns
Factory Lead Time :
22 Weeks
Width :
3.55mm
Max Operating Temperature :
150°C
Published :
2014
Datasheets
DMN3032LE-13
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN3032LE-13 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Base Part Number:DMN3032, DMN3032LE-13 pinout, DMN3032LE-13 datasheet PDF, DMN3032LE-13 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN3032LE-13 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMN3032LE-13


N-Channel Cut Tape (CT) 29mOhm @ 3.2A, 10V ±20V 498pF @ 15V 11.3nC @ 10V 30V TO-261-4, TO-261AA

DMN3032LE-13 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 498pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.6A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 10 ns.This device has a drain-to-source resistance of 35mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

DMN3032LE-13 Features


a continuous drain current (ID) of 5.6A
the turn-off delay time is 10 ns
single MOSFETs transistor is 35mOhm
a 30V drain to source voltage (Vdss)


DMN3032LE-13 Applications


There are a lot of Diodes Incorporated
DMN3032LE-13 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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