DMN3030LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Pin Count :

8

Terminal Position :

Dual

Factory Lead Time :

7 Weeks

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±25V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Drain Current-Max (Abs) (ID) :

9A

Published :

2012

Power Dissipation-Max :

2.5W Ta

Turn On Delay Time :

3.2 ns

Number of Terminations :

8

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.1V @ 250μA

RoHS Status :

ROHS3 Compliant

Weight :

850.995985mg

Turn-Off Delay Time :

18 ns

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

40A

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

18m Ω @ 9A, 10V

Number of Channels :

1

Width :

3.95mm

REACH SVHC :

No SVHC

FET Type :

N-Channel

Fall Time (Typ) :

14 ns

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Length :

4.95mm

Operating Temperature :

-55°C~150°C TJ

Rise Time :

4.5ns

Continuous Drain Current (ID) :

9A

Input Capacitance (Ciss) (Max) @ Vds :

741pF @ 15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Height :

1.5mm

Radiation Hardening :

No

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Number of Pins :

8