DMN3030LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

9A

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

1.5mm

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Pin Count :

8

Rise Time :

4.5ns

Gate to Source Voltage (Vgs) :

25V

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

741pF @ 15V

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

High Reliability

Drain to Source Breakdown Voltage :

30V

Weight :

850.995985mg

Terminal Position :

Dual

Vgs (Max) :

±25V

Drain Current-Max (Abs) (ID) :

9A

Width :

3.95mm

Rds On (Max) @ Id, Vgs :

18m Ω @ 9A, 10V

Number of Pins :

8

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

18 ns

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Length :

4.95mm

Terminal Form :

Gull wing

Fall Time (Typ) :

14 ns

Pbfree Code :

yes

Power Dissipation-Max :

2.5W Ta

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2012

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

40A

Factory Lead Time :

7 Weeks

Radiation Hardening :

No

Turn On Delay Time :

3.2 ns