DMN3029LFG-7

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Mfr.Part #
DMN3029LFG-7
Manufacturer
Diodes Incorporated
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 30V 5.3A PWRDI333-8
Stock
16,716
In Stock :
16,716

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
NO LEAD
Time@Peak Reflow Temperature-Max (s) :
40
Power Dissipation-Max :
1W Ta
Number of Terminations :
5
Continuous Drain Current (ID) :
5.3A
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Number of Pins :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2012
Terminal Finish :
Matte Tin (Sn)
Drain Current-Max (Abs) (ID) :
8A
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
5.3A Ta
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
580pF @ 15V
Rds On (Max) @ Id, Vgs :
18.6m Ω @ 10A, 10V
Reach Compliance Code :
not_compliant
RoHS Status :
ROHS3 Compliant
Packaging :
Cut Tape (CT)
Vgs (Max) :
±25V
JESD-609 Code :
e3
JESD-30 Code :
S-PDSO-N5
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
260
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Pbfree Code :
No
Case Connection :
DRAIN
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
30V
Additional Feature :
High Reliability
Terminal Position :
Dual
ECCN Code :
EAR99
REACH SVHC :
No SVHC
Number of Elements :
1
Factory Lead Time :
15 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
8-PowerVDFN
Pin Count :
8
Vgs(th) (Max) @ Id :
1.8V @ 250μA
Drain to Source Voltage (Vdss) :
30V
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
DMN3029LFG-7
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN3029LFG-7 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Number of Pins:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerVDFN, DMN3029LFG-7 pinout, DMN3029LFG-7 datasheet PDF, DMN3029LFG-7 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN3029LFG-7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMN3029LFG-7


N-Channel Cut Tape (CT) 18.6m Ω @ 10A, 10V ±25V 580pF @ 15V 11.3nC @ 10V 30V 8-PowerVDFN

DMN3029LFG-7 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 580pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 8A.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

DMN3029LFG-7 Features


a continuous drain current (ID) of 5.3A
a 30V drain to source voltage (Vdss)


DMN3029LFG-7 Applications


There are a lot of Diodes Incorporated
DMN3029LFG-7 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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