DMN3029LFG-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

PowerDI3333-8

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

18.6mOhm @ 10A, 10V

Vgs (Max) :

±25V

Configuration :

Single

RoHS :

Compliant

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Continuous Drain Current (ID) :

5.3 A

Supplier Device Package :

PowerDI3333-8

Power Dissipation (Max) :

1W (Ta)

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

580 pF @ 15 V

Package :

Tape and Reel (TR)

Number of Channels :

1 Channel

Input Capacitance :

580 pF

Manufacturer :

Diodes Incorporated

Maximum Operating Temperature :

+ 150 C

Min Operating Temperature :

-55 °C

FET Feature :

-

Max Operating Temperature :

150 °C

Max Power Dissipation :

1 W

Gate Charge (Qg) (Max) @ Vgs :

11.3 nC @ 10 V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Rds On Max :

18.6 mΩ

Number of Pins :

8

Series :

DMN3029LFG

Brand :

Diodes Incorporated

Technology :

Si

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Polarity :

N-Channel

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

5.3A (Ta)

Mounting Style :

SMD/SMT

Subcategory :

MOSFETs

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30 V

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel