DMN3026LVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.023Ohm

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

643pF @ 15V

Transistor Element Material :

SILICON

Turn On Delay Time :

2.2 ns

Number of Channels :

1

JESD-30 Code :

R-PDSO-G6

FET Type :

N-Channel

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.2W Ta

Rds On (Max) @ Id, Vgs :

23m Ω @ 6.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

JESD-609 Code :

e3

Element Configuration :

Single

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Capacitance :

643pF

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Factory Lead Time :

23 Weeks

Number of Terminations :

6

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Published :

2014

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

6.6A Ta

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

3 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

12.1 ns

Rise Time :

2.5ns

Continuous Drain Current (ID) :

6.6A