DMN3026LVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

Drain to Source Breakdown Voltage :

30V

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

12.1 ns

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

643pF @ 15V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Capacitance :

643pF

Rise Time :

2.5ns

JESD-30 Code :

R-PDSO-G6

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn On Delay Time :

2.2 ns

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

6.6A

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

23 Weeks

Drain-source On Resistance-Max :

0.023Ohm

Vgs (Max) :

±20V

Terminal Position :

Dual

Number of Terminations :

6

Fall Time (Typ) :

3 ns

Power Dissipation-Max :

1.2W Ta

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

23m Ω @ 6.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

6.6A Ta

Mount :

Surface Mount

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel