DMN3025LFG-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

S-PDSO-N5

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

18m Ω @ 7.8A, 10V

DS Breakdown Voltage-Min :

30V

Case Connection :

DRAIN

Turn On Delay Time :

3.8 ns

Factory Lead Time :

17 Weeks

Rise Time :

4.1ns

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

60A

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 10V

Fall Time (Typ) :

4.7 ns

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

605pF @ 15V

Pbfree Code :

yes

Turn-Off Delay Time :

17.9 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Position :

Dual

Additional Feature :

High Reliability

Package / Case :

8-PowerVDFN

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

7.5A

REACH SVHC :

No SVHC

Power Dissipation-Max :

2W Ta

Reference Standard :

AEC-Q101

Radiation Hardening :

No

Number of Terminations :

5

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Number of Pins :

8

Mount :

Surface Mount

Published :

2012

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40