DMN3024LSS-13
- Mfr.Part #
- DMN3024LSS-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.4A 8SO
- Stock
- 4,576
- In Stock :
- 4,576
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 6.4A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 16 ns
- Supplier Device Package :
- 8-SO
- Rds On (Max) @ Id, Vgs :
- 24mOhm @ 7A, 10V
- Number of Channels :
- 1
- Rds On Max :
- 24 mΩ
- Drain to Source Resistance :
- 24mOhm
- Drain to Source Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 30 Weeks
- Packaging :
- Cut Tape (CT)
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 1.6W Ta
- REACH SVHC :
- No SVHC
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 608pF @ 15V
- Weight :
- 73.992255mg
- Published :
- 2009
- Rise Time :
- 3.3ns
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 8 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 8
- Drain to Source Voltage (Vdss) :
- 30V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 2.9 ns
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 12.9nC @ 10V
- Continuous Drain Current (ID) :
- 8.5A
- Input Capacitance :
- 608pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Datasheets
- DMN3024LSS-13

N-Channel Cut Tape (CT) 24mOhm @ 7A, 10V ±20V 608pF @ 15V 12.9nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
DMN3024LSS-13 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 608pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 16 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 24mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
DMN3024LSS-13 Features
a continuous drain current (ID) of 8.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 24mOhm
a 30V drain to source voltage (Vdss)
DMN3024LSS-13 Applications
There are a lot of Diodes Incorporated
DMN3024LSS-13 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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