DMN3016LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Avalanche Energy Rating (Eas) :

25 mJ

Rds On (Max) @ Id, Vgs :

12m Ω @ 12A, 10V

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

23 Weeks

Vgs (Max) :

±20V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

25.1nC @ 10V

Power Dissipation-Max :

1.5W Ta

Additional Feature :

High Reliability

Number of Pins :

8

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

9.3A

Packaging :

Tape and Reel (TR)

Published :

2008

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1415pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

10.3A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.012Ohm

Continuous Drain Current (ID) :

10.3A