DMN3016LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

25.1nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Power Dissipation-Max :

1.18W Ta

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain Current-Max (Abs) (ID) :

9.5A

Factory Lead Time :

22 Weeks

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1415pF @ 15V

Number of Pins :

8

Drain-source On Resistance-Max :

0.016Ohm

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

24 mJ

ECCN Code :

EAR99

Number of Terminations :

5

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

12m Ω @ 20A, 10V

Continuous Drain Current (ID) :

10.8A

Terminal Finish :

Matte Tin (Sn)

Reference Standard :

AEC-Q101

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

10.8A Ta

Operating Temperature :

-55°C~150°C TJ

Published :

2015

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

70A