DMN3010LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

2.5W

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.5mm

Additional Feature :

High Reliability

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

9m Ω @ 16A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2096pF @ 15V

Published :

2008

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

5.6 ns

Number of Terminations :

8

Weight :

850.995985mg

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

45 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Length :

5.3mm

Width :

4.1mm

JESD-609 Code :

e3

Terminal Position :

Dual

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.009Ohm

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

2V @ 250μA

Rise Time :

8ns

Continuous Drain Current (ID) :

16A

Number of Channels :

1

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

64A

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

43.7nC @ 10V

FET Type :

N-Channel

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Transistor Application :

SWITCHING

Fall Time (Typ) :

27 ns

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No