DMN3010LFG-7
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- Mfr.Part #
- DMN3010LFG-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A PWRDI3333
- Stock
- 49,478
- In Stock ：
- 49,478
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 23 Weeks
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 10.7 ns
- ECCN Code :
- EAR99
- Length :
- 3.35mm
- Package / Case :
- 8-PowerVDFN
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Weight :
- 72.007789mg
- Lead Free :
- Lead Free
- Width :
- 3.35mm
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2015
- Power Dissipation-Max :
- 900mW Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2075pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 18A, 10V
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 30A
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 19.6ns
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 31 ns
- Drain to Source Breakdown Voltage :
- 30V
- Height :
- 850μm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta 30A Tc
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 4.5 ns
- Vgs (Max) :
- ±20V
- Datasheets
- DMN3010LFG-7
N-Channel Tape & Reel (TR) 8.5m Ω @ 18A, 10V ±20V 2075pF @ 15V 37nC @ 10V 8-PowerVDFN
DMN3010LFG-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2075pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMN3010LFG-7 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 31 ns
DMN3010LFG-7 Applications
There are a lot of Diodes Incorporated
DMN3010LFG-7 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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