DMN3009SK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

20A

DS Breakdown Voltage-Min :

30V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Vgs (Max) :

±20V

Factory Lead Time :

17 Weeks

Reference Standard :

AEC-Q101

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 15V

Pulsed Drain Current-Max (IDM) :

100A

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Drain-source On Resistance-Max :

0.0055Ohm

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 30A, 10V

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

55 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.4W Ta

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Elements :

1