DMN15H310SE-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

7.1A

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

2A Ta 7.1A Tc

Rds On (Max) @ Id, Vgs :

310m Ω @ 1.5A, 10V

Drain Current-Max (Abs) (ID) :

2A

RoHS Status :

ROHS3 Compliant

Published :

2015

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G4

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

Pulsed Drain Current-Max (IDM) :

10A

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

150V

Power Dissipation-Max :

1.9W Ta

Factory Lead Time :

22 Weeks

Package / Case :

TO-261-4, TO-261AA

Drain-source On Resistance-Max :

0.31Ohm

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

1.45 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Reach Compliance Code :

not_compliant

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

150V