DMN1004UFDF-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

12V

Factory Lead Time :

17 Weeks

Transistor Element Material :

SILICON

Package / Case :

6-UDFN Exposed Pad

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e4

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 15A, 4.5V

JESD-30 Code :

S-PDSO-N6

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain Current-Max (Abs) (ID) :

15A

DS Breakdown Voltage-Min :

12V

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Case Connection :

DRAIN

Vgs (Max) :

±8V

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Surface Mount :

yes

Power Dissipation-Max :

2.1W Ta

Drain-source On Resistance-Max :

0.0048Ohm

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

2385pF @ 6V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application :

SWITCHING