DMN1008UFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

S-PDSO-N6

Drain-source On Resistance-Max :

0.0125Ohm

Power Dissipation-Max :

700mW Ta

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

Automotive, AEC-Q101

Number of Elements :

1

Terminal Position :

Dual

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

8m Ω @ 5A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

12.2A Ta

DS Breakdown Voltage-Min :

12V

Package / Case :

6-UDFN Exposed Pad

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

995pF @ 6V

Drain to Source Voltage (Vdss) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2017

JESD-609 Code :

e4

Factory Lead Time :

18 Weeks

Number of Terminations :

6

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

FET Type :

N-Channel

Vgs (Max) :

±8V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

12.2A

Gate Charge (Qg) (Max) @ Vgs :

23.4nC @ 8V