DMN1260UFA-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

59.2 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Vgs (Max) :

±8V

Capacitance :

60pF

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-N2

Turn-Off Delay Time :

106.5 ns

ECCN Code :

EAR99

Rise Time :

18.8ns

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

366m Ω @ 200mA, 4.5V

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

15 Weeks

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.5A

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Number of Elements :

1

Power Dissipation-Max :

360mW Ta

Element Configuration :

Single

Mount :

Surface Mount

JESD-609 Code :

e4

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Continuous Drain Current (ID) :

500mA

Gate Charge (Qg) (Max) @ Vgs :

0.96nC @ 4.5V

Published :

2015

Drain to Source Breakdown Voltage :

12V

Terminal Form :

NO LEAD

Package / Case :

3-XFDFN

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

7.4 ns

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON